INFLUENCE OF RADIATION ON THERMOSENSITIVITY OF FIELD-EFFECT JUNCTION TRANSISTORS

Abstract

Influence of concentration of impurity, which defines of conductivity type in channel on the radiation resistance of thermal sensors, which based on field-effect junction transistors. Dependences of saturation drain current of transistors with the p-n-junction gate from the value of streams of electrons, neutrons and g-quanta are measured. Degradation of saturation drain current of transistors with the p-n- junction gate under exposure of neutrons begins at streams almost on two orders less, than it was got under exposure of electrons. An irradiation leads not only to growing of thermo sensitivity of sensors in 2...5 times but also to decreasing of variation of her values among different samples. Degradation of characteristics of the field-effect МOS-transistors with a built-in channel begins at the streams of irradiation on two orders of less, than degradation of transistors with the p-n-junction gate. Influence by the small doses of γ-quanta does not diminish variation of parameters of MOS-transistors, but the γ-irradiation by considerable exposure doses leads to the improvement of reproducibility of saturation drain current and thermo sensitiveness the field-effect МOS-transistors.