INCREASING OF PHOTORESISTORS SENSITIVITY IN THE MAGNETIC FIELD

Abstract

Possibilities and physical principles of increasing of sensitivity of photoresistors we considered. The basic theoretical relations, which describe the parameters of photoresistors are resulted. It is shown, that the main way of magnification of sensitivity of photoresistors is the increasing of mobility and effective lifetime of the charge carriers generated by light. The photoresistor location in the magnetic field that directed perpendicularly to the electric current and a luminous flux increases photosensitivity in several times.