THE INFLUENCE OF THE MOVEMENT OF IMPURITY IONS ON THE STABILITY OF LEDS

Abstract

Abstract. The influence of the motion of impurity centers on the stability of GaInAsP-based light-
emitting diodes and their efficiency are studied. The stability and efficiency of the electroluminescence of
LEDs is mainly determined by the ratio between the intensities of the radiative and non-radiative
recombination of charge carriers. We studied the electroluminescent and electrical characteristics of
LEDs. To clarify the degradation mechanism of LEDs, we studied the effect of their current training for
3000 hours at various current densities for stability and efficiency and for their electrical characteristics. It
was shown that the degradation of LEDs at low injection levels is associated with the drift of impurity
centers near the inhomogeneities of р-л-junctions. It is shown that during the degradation of LEDs, the
magnitude of the radiative current component at a fixed voltage varies little. At the same time,
nonradiative current components increase significantly. It was established that the growth of nonradiative
current components is associated with the drift of mobile impurities to inhomogeneities of the р-л-junction.
The kinetics of LED degradation was calculated using certain assumptions. The diffusion coefficient of the
ions responsible for the degradation of the diodes is estimated. It is shown that “sudden” LED failures are
of the same nature as their gradual degradation. They can occur at a sufficiently high concentration of
mobile impurities. The obtained dependences of the radiation intensity on the duration of degradation can
be used to estimate the diffusion coefficient of a mobile impurity.