RADIATION DEGRADATION OF LIGHT-EMITTION DIODES WITH RERADIATION OF PHOTONS

Abstract

Research radiation degradation of light-emitting diodes with the reradiation photons that based on the GaAlAs under the action of Co60 γ-radiation was made. Features of the mechanism of photon generation in these LEDs lead to the peculiarities of radiation degradation of these structures. Irradiation with relatively small doses g-radiation Co60 make it possible to introduce nonradiative recombination centers into the active region of light-emitting diodes and other layers that participating in the processes of generation and emission of photons. Investigation of characteristics in such LEDs during radiation degradation is necessary to predict the change in their parameters for uncontrolled variations concentration of these centers during the manufacture of these structures. The dependences of the intensity of the short-wave and long-wave bands of the optical emission spectra whis integral flux of γ-quanta are studied. Intensity of the short-wave band of the optical spectra of such diodes from the flux of g-quanta satisfys decreasing the nonradiative lifetime of electrons is founded. It is shown that the rate of reduction of the long-wavelength band under the action of γ-irradiation is much higher than that of the short-wave band. Change the optical losses due to radiation in LEDs with reemission of photons can be neglected is founded.The use of such diodes makes it possible to separate the degradation processes.