CURRENT CONTROL RANGE OF THE LED

Abstract

The brief review of existing types of LEDs with controllable emission spectrum. The proposed design of the led on the gallium arsenide with an asymmetric doping profile of p+-n structure. To obtain a real separation of the spectral bands used, the doping of p+-region silicon that creates an acceptor level with an activation energy of 100 MeV. The described method of creating a p+-n structures. It is shown that the led emits in two bands of the spectrum with energies of highs of 1,33 eV and 1,42 eV. The ratio of intensities of spectral bands is changed to 7 when the density of pulse current 80 A/cm2 from 500 A/cm2. The physical mechanism leading to such properties of the led.