RADIATIVE RECOMBINATION IN A WEAKLY DEGENERATE n-GaAs

Abstract

The edge luminescence spectra of weakly-doped gallium arsenide (GaAs) of p- and n-types in the temperature range 77 to 300 K have been measured. The types of radiative transitions and their dependence on the doping degree and temperature are determined. The criterion of disappearance of the donor energy levels due to the Debye shielding of impurities is established. The photoluminescence spectra were compared with the electroluminescence spectra of asymmetric p+-n junction in the regime of strong injection into the n-region. A special role of the shallow donor states in the radiative recombination in nondegenerated and weakly-degenerated n-GaAs is shown.