INFRARED INFORMATION RECEIVERS BASED ON SEMICONDUCTIVE COMPOSITE MATERIALS

Abstract

The article presents a phototransistor (PTSH - Schottky field-effect transistor) with a Schottky barrier based on an IrSi-Si contact and an p-channel type, which has a high photosensitivity and a more wider region of spectral sensitivity compared to Schottky diodes and MOS (metal oxide semiconductor) and MDS (metal-dielectric-semiconductor) structures. The current-voltage characteristics of breech-block of the field-effect transistor controlled by the Schottky barrier are investigated on the basis of the IrSı-Sı contact. The dependence of breech-block currents on the voltage is determined. Essential increasing of Schottky-matrixes filling coefficient is enriched by charge readout, stored in diode Schottky, not with help DCC (devices with charge coupling) – registers, but by its injection in to signal wire, by analogy with DCI (devices with charge injection) – to structures on narrow-band gap semiconductors. In this case multi element matrix contains horizontal wires for inquiry elements selected line, vertical signal wires, MOS-key (metal-oxide-semiconductor) for connection interrogated column and matrix of photosensitive elements, every of them consist of photosensitive diode Schottky and MOS-key. By it is an experimental method set that, dependence ofcurrent of breech-block of the field transistor of Schottkyshows with the induced channel, that for tension with theinfrared of transistor structure, the positive charge retained intape of IrSi runs down in silicic tape, forming a photoelectric inthe aim of breech-block. The considered infrared Sensor can be combined with the elements of the integrated circuits, that opens wide prospects for his use in multielement infrared photos receivers of large degree of integration.